Solution-Processed Photoinduced Multilevel Resistive Switching Devices Based on Lead-Free All-Inorganic Perovskite

The letter reports lead free all-inorganic perovskite based resistive switching (RS) memory devices. The cesium tin bromide (CsSnBr
₃
) perovskite films were prepared by the solution deposition technique. The memory devices exhibit bipolar resistive RS characteristic and light assisted multilevel storage capability. The proposed devices show a maximum ON/OFF ratio of ~ 10
⁵
, data retention of ~ 10
³
s, and endurance of 400 cycles. We explain the resistive switching effect on lights of the formation and rupture of a conducting path under an electric field. This work may provide an opportunity to develop transparent, flexible, and multibit storage capacity photonic resistive memory devices based on all-inorganic perovskites for successful logic application.