Analysis of Nanometer-Scale n-Type Double-Gate (DG) MOSFETs Using High-ƙ Dielectrics for High-Speed Applications

Electronic properties of certain compound semiconductors make them most suitable for future CMOS in the nanometer regime. The most suitable compound of semiconductors has to be chosen for RF/high-speed applications. This work discusses the feasibility of the base material and also proposing a high-k dielectric material for the gate insulator. These types of high-k dielectric materials provide higher controllability over applied gate voltage. The simulation result verifies that the La2O3 layer oxide in the Double-Gate (DG) MOSFET provides higher controllability of the transistor at the subthreshold region. The measured values of doping density at 8 nm source/drain characteristic length with a peak channel doping concentration of 2×10
¹⁸
cm
^-3
show that the n-type DG MOSFET is more submissive than the conventional MOSFET.