Impact of Channel Splitting on Gate All Around Tunnel Field Effect Transistor (GAATFET)

In this paper, we examine the concept of channel splitting in Gate All Around Tunnel Field Effect Transistor (GAATFET) and its impact on the performance of the device. The TFET device proposed in this work is designed for a channel length of 20nm and the channel region is divided with equal lengths on the same side. The doping concentration has been kept more towards the drain side channel. Numerical simulation using CAD device simulation software has been performed for investigating device performance. Results have been compared with the uniform channel GAATFET. Simulation results show that there is a reduction in off current by 1 decade in the case of split channel GAATFET. Further, a larger difference is found in the electron current density (ECD) of the split channel GAATFET. The subthreshold swing is also found to decrease to a value of 33.14 mV/decade. The threshold voltage was found to be 0.092V.