Impact of OFF-state Gate Bias on Dynamic RON of p-GaN Gate HEMT

In this work, the impacts of OFF-state gate bias (V
GS,OFF
) on the dynamic on-resistance (R
ON
) are investigated in the commercial Schottky-type p-GaN gate high-electron-mobility transistor (HEMT). A more negative V
GS,OFF
could aggravate the dynamic R
ON
degradation, especially when switching with a large OFF-state drain bias. In addition, the dependence of dynamic R
ON
on the high drain bias also varies with V
GS,OFF
. The underlying mechanism is suggested to be associated with the generation and movement of holes, which are both strongly affected by V
GS,OFF
.