Analysis of Anomalous Behavior during Negative Drain Input Operation of Fully Isolated nLDMOS

This paper presents analyses of anomalous behaviors during negative drain input operation of fully isolated nLDMOS. Unexpected I-V curves, i) multiple polarity switching of I
_S/BG
, ii) I
_SUB
leakage before the parasitic PNP activation and iii) abrupt increases of all terminal currents are shown. Physical mechanisms of those anomalous behaviors are clarified by TCAD simulation.