The On-Chip Lateral Super-Junction IGBT in Integrated High-Voltage Low-Power Converters

HV integrated lateral IGBTs are investigated as an attractive alternative to MOSFETs in integrated high-voltage (up to 230 V), low-power (5 − 500 mW) converters. A performance comparison of SJ-LIGBTs and SJ-MOSFETs is applied to define the design constraints and, consequently, to implement an optimized one-step power conversion topology with both device types. Measurement results of the topology with SJ-LIGBT show an up to 4.2 % higher efficiency in comparison to the SJ-MOSFET converter at 20.4 % smaller power-switch size.