Self-turn-on-free 1200V scaled CSTBT™ driven by 5V gate voltage with wide SOA

Scaled IGBT for 5V gate voltage operation is a key technology to reduce the V
CEsat
and the driver power consumption. In this paper, we experimentally demonstrate a self-turn-on free 1200V scaled CSTBT™ driven by 5V gate voltage. By using narrow mesa and fine n
⁺
-emitter pattern, low V
CEsat
and wide SOA was obtained. Also, high self-turn-on immunity even without negative gate bias was achieved owing to low C
res
/C
ies
ratio.