Mechanism and Improvement on Horizontal Crosstalk in 8K a-Si TFT-LCD

The influence mechanisms of horizontal crosstalk for 65-inch 8K vertical alignment liquid crystal displays (VALCD), which has an amorphous silicon (AS) layer deposited under the data line and is driven by a vertical-line-inversion method, are investigated theoretically and experimentally. Results shown that the secondary coupling effect of data signal on the common signal through the storage electrode, which is caused by the capacitance variation of the AS layer in different electric field directions, is the main reason of horizontal line crosstalk. Moreover, some strategies for improving horizontal line crosstalk from the aspects of layout design optimization, driver model and compensation circuit development are experimentally verified and discussed. This research can provide efficient guidelines for the design of high-resolution LCD display with less crosstalk.