Fully Printed Inorganic Schottky Diode

Inorganic semiconductors have the potential features to enhance the stability and performance of printed electronic devices. In this work, we present a microcantilever (μC) printed device by using zinc oxide (ZnO) and silver nanoparticles (AgNP) ink. Two types of devices havebeen fabricated on silicon wafers using two methods: (i) theZnO ink is printed between twoμC printed AgNP electrodes separated within a sub-5μm gap (ii) the ZnO ink havebeen drop-casted between twoμC printed AgNP electrodes.Therefore the first type of devices is a fully printed structure.The measurements of both devices show distinct electrical aspects corresponding to the different additive fabrication approach. Furthermore, the fully printed Schottky diode exhibits a remarkable high on/off current ratio of 1.85×10
⁵
at room temperature with a barrier height of 0.49 eV and series resistance of 594 kΩ