Silicon Photonic Integrated Circuit Technology with Wafer Level Integrated Lasers

Summary form only given, as follows. The complete presentation was not made available for publication as part of the conference proceedings. We will present a photonic integrated technology on Silicon for producing Photonic fully integrated circuits with integrated lasers. This is made by bonding unprocessed III-V dies at the backside of Silicon photonic base wafers, and post processing the dies for forming the lasers at the wafer level. On the contrary to existing heterogeneous III-V/Si technologies, this technology relies on standard Silicon photonic processes available from commercial fabs. The latter now propose doped silicon, germanium and silicon nitride materials for accommodating, respectively, best in class modulators, photodetectors and filters. Together with backside integrated lasers, the technology enables fully photonic integrated circuits at 1310nm or 1550nm, with unprecedent features for optical communications and 3D sensing.