Compact Modeling of Flicker Noise in High Voltage MOSFETs and Experimental Validation

An analytical model of flicker noise (also called 1/f or low frequency noise) for the drift region is developed to formulate a 1/f model for high voltage MOSFETs using the sub-circuit approach in this work. For halo doped drain extended MOSFET (DEMOS), the contribution factors of halo, channel and drift regions are obtained to capture anomalous behavior of 1/f noise. Similar to Halo doped DEMOS, for LDMOS, the contribution factors for channel and the drift region are obtained to capture the S
ID
for different drain biases and channel lengths. The proposed model is validated with measurement data of 50V LDMOS and DEMOS.