High-Voltage Quasi-Vertical GaN Junction Barrier Schottky Diode With Fast Switching Characteristics

In this letter, we report a quasi-vertical GaN junction barrier Schottky diode on low-cost sapphire substrate. With the high quality GaN epitaxy and selective-area p-islands formed via Magnesium ion implantation at the anode region, reverse leakage in level of 10
^-7
A/cm
²
was achieved, as well as a high on/off current ratio of 10
¹⁰
and a high breakdown voltage of 838 V. Meanwhile, advantageous characteristics as expected in vertical GaN Schottky barrier diode were realized, including a low turn-on voltage of 0.5 V and fast switching performance under 400 V/10 A operation condition. Along with the improved heat dissipation via substrate thinning and packaging techniques, the diode retains a relatively low thermal resistance, enabling high current rectification level over 60 A, power efficiency up to 98.7 %, while maintaining low case temperatures.