Unified Compact Modeling of Charge Trapping in 1/f Noise, RTN and BTI

We review and critically discuss the unified statistical modeling of charge trapping in the context of 1/f noise, RTN and BTI. The focus is on circuit (electrical) level models to support circuit designers. Modeling is based on discrete device physics quantities, which cause statistical variability in the electrical behavior of MOSFETs. It allows for the derivation of analytical formulations for 1/f noise, RTN and BTI using a single modeling framework.