$\beta$ -Ga2O3 micro-flake FET SBPD with record detectivity of 3.87xl017Jones for weak light detection

High performance
$\beta-\text{Ga}_{2}\mathrm{O}_{3}$
field-effect transistor (FET) solar-blind photodetectors (SBPDs) with record detectivity (D*) of
$3.87\times 10^{17}$
Jones, responsivity (R) of
$2.50\times 10^{4}\mathrm{A}/\mathrm{W}$
, photo-to-dark-current ratio (PDCR) of
$7.87\times 10^{6}$
, and external quantum efficiency (EQE) of
$1.22\times 10^{7}\%$
are reported based on mechanically exfoliated
$\beta-\text{Ga}_{2}\mathrm{O}_{3}$
micro-flakes. The excellent performance of the
$\beta-\text{Ga}_{2}\mathrm{O}_{3}$
detector under
$\mu \mathrm{W}/\text{cm}^{2}$
level illumination makes it one of the best Ga
2
O
3
SBPDs towards weak light detection, sharp imaging, and safe communication application.