Sputtering Growth of Metal Oxynitride Semiconductors for Excitonic Devices

Effects of substrate surface polarity on the growth of sputter-deposited (ZnO)
_x
(InN)
_1-x
(called “ZION” hereinafter) films have been investigated. ZION films were deposited on Zn-face and O-face ZnO substrates by radio-frequency magnetron sputtering. The ZION film on the Zn-face substrate has rough surface with the root mean square (RMS) roughness of 4.30 nm, whereas, the ZION film on O-face ZnO substrate has smooth surface with the RMS roughness of 2.71 nm. This result is attributed to the difference in Zn mobility on the substrate surfaces.