Optimization of Bump Defect at High-Concentration In-Situ Phosphorus Doped Polysilicon/TEOS Oxide Interface for 3D NAND Flash Memory Application

In the 3D NAND Flash memory manufacturing process, high-concentration in-situ phosphorus-doped polysilicon and TEOS oxide stack will produce bump defects at the interfaces, causing pattern defects and electrical failures. The formation mechanism of bump defects caused by oxygen-containing groups and phosphorus at the lower and upper interfaces of phosphorus-doped polysilicon is investigated in detail. After wet processing the two surfaces, the bump defects are significantly reduced, and the yield rate is greatly improved.