A 4-Bit Multistate Frequency-Selective Surface With Dual-Band Multifunction Response

In this letter, a novel 4 b multistate frequency-selective surface is proposed. Four p-i-n diodes are used to maneuver multifunction behavior of the structure with seven different functional states. The 4 b binary state operations 0000, 1100, 0011, and 1111 offer transverse electric (TE)/transverse magnetic (TM) waves both transmit, TE transmit/TM shield, TM transmit/TE shield, and TE/TM both shield, respectively, at 2 GHz frequency. The passband at 2 GHz frequency has
$-\text{10}$
 dB fractional bandwidth of 117%. The binary states 1101 and 1110 are symmetric, which select the TE wave transmit/TM wave shield to the passband at 3.45 GHz frequency with
$-\text{10}$
 dB fractional bandwidth of 49%, whereas binary states 1011 and 0111 allow the TM wave to transmit at 3.45 GHz and shield the TE wave. The four symmetric binary states 0101, 0110, 1010, and 1001 provide transmission band at 3.45 GHz frequency for dual-polarized plane wave incidence. The transmission of both the passbands can be shielded by selecting the binary state equal to 1111. An equal circuit model is used to elaborate the contribution of different passive structural elements in terms of lumped components. A prototype of the structure is fabricated, and transmission coefficients for different states at normal and oblique incidence of the electromagnetic plane wave are measured, which verifies the simulated responses of the structure.