First-principles study on the threshold switch selector Graphene/h-BN/Graphene and the improvement of its performance

In this work, a selector has been proposed with a simple single-layer Graphene/h-BN/Graphene structure. The partial charge density (PCD), DOS and PDOS proved that the Boron vacancies (V
b
) conductive filament (CF) is formed when the threshold voltage (V
th
)is 0.5V, non-linearity (NL) is 10
⁴
.Then, we found that V
b
with a concentration of 8.33% at the interface improves the performance of the selector significantly (NL increased by 10 times). This work will be instructive and valuable for the design and optimization of Graphene/h-BN/Graphene selector.