Performance Analysis of Graphene Nanoribbon Field Effect Transistor (GNRFET) based 6T and 7T SRAMs

With the advancement of technology and recent developments on Internet of Things (IoT), devices with low power and smaller size come into consideration to keep pace with the current generation's demand. Shrinking Silicon devices introduce leakage power which is inappropriate for portable devices. These limitations of silicon-CMOS transistor technology can be mitigated by new Graphene nanoribbon Field effect transistor (GNRFET) technology. GNRFET's larger on off current ratio, extremely low leakage current and low supply voltage applications makes it a perfect fit for digital applications. Static Random Access Memory (SRAM) is an integral part of a chip which consumes large amount of area and power. To accomplish current technological needs GNRFET can be used to design SRAMs for low power devices. In this paper we have analysed Read Static Noise margin (RSNM), power, delays of conventioal 6T SRAM with three other 7T SRAMs using GNRFET and results show significant improvement.