Furthering the understanding of quantum well intermixing in InP

Quantum well intermixing can be accomplished via the introduction of excess defects. We review key concepts and parameters required in order to understand the physics of the technique. We show that in the cases of ion implantation and low temperature (LT) epitaxy in InP, the intermixing-causing defect is highly mobile. In both cases the interdiffusion of the group-V sublattice is greater than the group-III sublattice, resulting in strain development and a reduced splitting between the heavy hole and light hole transitions. Using additional characterization of LT InP, we propose that the mobile defect is a P interstitial.