Simulation Analysis of Electromagnetic Radiation of Inverter Cable

Due to the high DV / dt and di / dt of wide bandgap power electronic devices such as SiC IGBT and MOSFET, their high frequency interference has always been the focus of attention, but more attention is paid to the conducted EMI caused by switching power supply to some devices around. In this paper, in order to analyze the field strength changes around the AC power in the cable after the output of the inverter composed of SiC MOSFET, according to the actual electromagnetic radiation experimental scene of the SiC drive board, a physical model is built in CST cable studio for field circuit joint simulation, and the field strength change at different distances are analyzed.