A method proposed for calculating the switching loss of SiC MOSFET in half bridge circuit

SiC MOSFET has the advantages of high temperature resistance, high voltage resistance and fast switching, so it has been widely used in various topologies. However, the high switching frequency makes the switching loss of SiC MOSFET cannot be ignored. In order to better estimate the circuit loss and better design the circuit parameters, it is necessary to study the switching process and switching loss of SiC MOSFET. In order to better model the switching process of SiC MOSFET and estimate its switching loss. In this paper, a method of calculating the switching loss of SiC MOSFET in half bridge circuit is proposed. According to the circuit equivalent model and the working characteristics of the SiC MOSFET, the voltage and current waveforms in the switching process are obtained, and then the switching loss is calculated. The simulation test was carried out using LTspice simulation software, and the simulation results are basically consistent with the calculation results. The validity of the calculation method is verified by building the experimental board and carrying out the double pulse test. This method can be applied to specific conditions and topologies, and has certain universality.