Effect of Heat Sink in Back-End of Line on Self-Heating in 22 nm FDSOI MOSFETs

This work studies the effect of heat sink in the back-end of line on the self-heating (SH) parameters. The RF characterization technique, which involves S-parameter measurements over a wide frequency range, is used to evaluate SH parameters. Two types of sink configurations in the back-end of line (BEOL) are considered; one connected to the gate and the other left floating. We experimentally demonstrate that gate-connected heat sink allows for a reduced self-heating in 22 nm FDSOI devices. Around 15% to 20% reduction in thermal resistance is observed for the gate-connected heat sink in comparison to the floating sink.