Trap identification on n-channel GAA NW FETs

In this work, low frequency noise spectroscopy is performed on n-channel gate all around (GAA) nanowire (NW) FETs. The study of generation-recombination noise at fixed temperature as a function of the applied bias suggests the existence of traps located in the depleted Si film. The temperature evolution of the generation-recombination noise at fixed polarization allows constructing an Arrhenius diagram from which a hydrogen related trap was identified. Moreover, it is suggested that it is more suitable to use the surface trap density as a figure of merit.