A Simple Method to Create Corners for the Lookup Table-Based MOSFET Models Through Inputs and Outputs Mapping

This article presents a simple method to create corner models to capture process variations for the lookup table-based MOSFET models through inputs and outputs mapping. The electrical specifications, including the threshold voltage, peak transconductance, ON-state resistance, saturation current, and gate oxide thickness, can be fitted through five model parameters. The effectiveness of the method is demonstrated by both the FinFET model BSIM-CMG and the planar MOSFET measurement data.