A 28 GHz and 38 GHz Dual-Band LNA Using Gain Peaking Technique for 5G Wireless Systems in 22 nm FD-SOI CMOS

This paper presents a high-gain dual-band low noise amplifier (LNA) for 5G wireless systems. The LNA is implemented in 22nm FD-SOI CMOS technology and operates simultaneously in the 28 GHz and 38 GHz millimeter-wave 5G bands. The circuit consists of three cascaded cascode amplifier stages. To obtain a dual-band response, gain peaking technique was implemented. Single-band matching networks were used to match the circuit input and inter-stage at different target frequencies. A dual-band matching network at the output ensures low return losses at both frequencies of interest. For a power consumption of 13. 6mW from a 1. 6V supply, the LNA provides a peak gain of 25. 1dB and a minimum noise Figure of 3.6 dB. The measured gain at 28 GHz and 38 GHz is greater than 22 dB. For a competitive power consumption, the LNA compares well against previously reported designs by showing one of the highest measured gain, gain-bandwidth product (GBW) and comparable noise figure.