320 GHz On-Chip Circularly-Polarized Antenna Array Realized with 0.13 μm BiCMOS Technology

A 320 GHz on-chip circularly-polarized (CP) antenna array that has been facilitated with 0.13 μm SiGe BiCMOS technology is presented. It is the first designed and prototyped THz-band on-chip antenna array with circular polarization and high directivity. The antenna is realized by designing a 4 ×4 microstrip-fed CP patch antenna array inside the silicon dioxide layer on top of a silicon base. A sequential phase rotation scheme is applied to the four 2 ×2 subarrays to achieve wide axial ratio (AR) bandwidth (8.7 GHz). The antenna array was successfully prototyped in a 3.6×3.6 mm
²
area on a silicon wafer. Consequently, it easily combined with other integrated circuit (IC) components. The developed THz on-chip CP antenna is highly desired for the emerging ultra-high speed wireless applications.