Total Ionizing Dose effects in DDR3 SDRAMs under Co-60 and X-ray irradiation

This paper presents an analysis of the TID sensitivity of Commercial Off-the-Shelf (COTS) DDR3 memories. Experimental setup and results following
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CO and X-ray characterization campaigns using dynamic test methods are described. Parametric drifts and functional failures, including data retention time test, are observed and discussed. An additional
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CO test campaign, using static test method highlights the impact of the applied biasing mode during gamma ray irradiation. As energy saving has become increasingly a key driver of the DRAMs evolution, manufacturers has developed operating low power modes, that can be activated while the component is idle, reducing its power consumption. This paper experimentally reveals a TID-induced higher sensitivity of those low power modes.