Current Transport Mechanism of High-Performance Novel GaN MIS Diode

In this work, we report a high-performance lateral GaN metal-insulator-semiconductor (MIS) diode with a low turn-on voltage (V
_ON
) of 0.32 V. Both in-depth theoretical calculations on current transport mechanisms and a forward conduction model are demonstrated. Based on the calculation results, the direct tunneling (DT) and thermionic emission (TE) coexist as the forward conduction mechanism, contributing to this low subthreshold swing (SS). Furthermore, a 1.8 nm thick Al
₂
O
₃
interlayer increases the equivalent Schottky barrier height (
$\Phi _{\text {B}}$
) which effectively suppresses the reverse leakage to
$4.5\times 10^{-{4}}$
mA/mm at room temperature.