A Gated-Diode ESD SCR-Incorporated BJT for Reversed Floating P⁺ Junction Modulation

This work presents a novel gated- diode SCR-incorporated BJT (SIB) structure for ESD protection purpose. A gated diode built in the SIB structure modulates reverse-biased P
⁺
/ N-well diode for better junction breakdown control. This device could achieve high TLP second breakdown current /ESD threshold close to that of an SCR, very high holding voltage, and reduced trigger voltage, as well as excellent latchup immunity.