Dilute nitride GaPNxas potential top cell candidate for Silicon based multijunction solar cells

This work reports on the growth of dilute nitride GaPN
_x
lattice-matched to Si as a pathway for Si-based multijunction solar cells. GaPN
_x
layers were grown using a plasma assisted molecular beam epitaxy with varying N concentrations. High resolution X-Ray ray diffraction analysis revealed high structural quality of the grown thin-film layers including the successful integration of GaPN
_x
with a GaP buffer layer on Si substrate. Low temperature photoluminescence spectroscopy results showed the peak position to be around 1.94eV at 100K for the lattice-matched case. This value is close to the ideal bandgap for independent connection with Si bottom cell in a tandem configuration.