MoOxbased hole selective contact - Inference from the Simulation

Transition metal oxide-based carrier selective contacts are under intense research. In this work, we compare the two different set of material parameters of Molybdenum Oxide (MoO
_x
) using the numerical simulation and discuss different hypothesis while correlating with the reported experimental data. We found that a particular set of the parameter could better explain the transfer-length-method (TLM), dark and 1-sun J-V curve, and surface photo-voltage measurement for different annealing temperature. Also, it leads to the different inference that the hydrogen effusion-from the hydrogenated, intrinsic amorphous silicon-could have caused trap-limited transport instead of work function reduction.