High efficiency solar cell based on Cu(In,Ga)S2 thin film grown by 3-stage process

We investigate the structural, morphological and optoelectronic properties of Cu(In,Ga)S
₂
thin films synthesized following the 3-stage process. The optoelectronic characteristics of the layers are observed drastically improved when the highest processing temperature is increased up to 600°C. Surprisingly, these latter films are not those yielding the highest cells efficiency, probably because of non-optimized buffer/absorber interface. The best performance we have achieved within the frame of this study is 14.2% for a bandgap of 1.65 eV, which is among the best results ever reached with these polycrystalline structures.