Case Study of SIMS analysis on Germanium isotopes and Arsenic implant sample

A previous study [1] on arsenic depth profiling in the silicon germanium alloys based structures using numerical approach was able to resolve mass interference between
²⁸
Si
⁷⁵
As-and (
⁷⁴
Ge
²⁹
Si
^-
,
⁷³
Ge
³⁰
Si
^-
,
⁷⁴
Ge
²⁸
Si
¹
H
^-
, 73Ge
²⁹
Si
¹
H
^-
,
⁷²
Ge
³⁰
Si
¹
H
^-
), demonstrated that an accurate arsenic profile with enough dynamic range can be obtained. The background subtraction algorithm is using un-doped silicon germanium alloy with lightest isotopes of Ge and Si with ion cluster
²⁸
Si
⁷⁰
Ge as reference. However, this numerical approach is not suitable for the current case study on mass interference of germanium and arsenic due to absence of
⁷⁰
Ge implant, there is no available reference signal for background subtraction. In this paper, quantification approach was traced using
²⁸
Si
⁷⁵
As
^-
and the abnormal profile was investigated using
³⁰
Si
⁷⁵
As
^-
with high impact energy (hence high current) ion beam.