Silicon based resonant power detector for 620 GHz

In this paper we report the terahertz detection by field-effect transistors in 65-nm CMOS technology with on-chip integrated patch antennas. In conjunction with continuous wave photomixer source, detectors demonstrate > 40 dB signal-to-noise ratio and minimal NEP of 12 pW/√Hz at 1 kHz of chopping at the resonant frequency of 620 GHz. This NEP value is by few pW/√Hz lower than best reported values for this category of detectors which gradually approaches the state-of-the-art characteristics of THz bolometers.