New microscopic approach to e-beam lithography simulation

This paper presents novel microscopic approach to simulation of key electron-beam lithography processes - PMMA chain scissions at exposure stage and PMMA development at "wet" stage. Alongside the actual models of e-beam interaction with resist and substrate, the detailed PMMA layer model is utilized in both exposure and development simulation. PMMA main-chain scission rate is estimated by simulation of experimentally determined radiation scission yield, G. The results of simulation show that scission rate is overestimated in case of direct usage of common G value. Moreover, remote PMMA main-chain scissions due to ester side group elimination should be taken into account as well as direct scissions due C-C backbone bond rupture. The application of PMMA layer model for the simulation of PMMA development allows to consider not only stochastic nature of PMMA chain scissions but molecular PMMA structure.