High-Speed Heterogeneous Quantum Dot Avalanche Photodiodes with Polarization Dependent Gain

We present a heterogeneous GaAs-based quantum dot (QD) avalanche photodiode (APD) on silicon with a record-high gain-bandwidth product (GBP) of 300 GHz and open eye diagrams up to 15 Gb/s. The polarization dependence of gain, responsivity, and bandwidth has been investigated for the first time.