Atomic Silicon Quantum Dot: A New Designing Paradigm of an Atomic Logic Circuit

The recent fabrication progress in logic circuits using atomic-scale silicon dangling bond (DB) makes it a promising candidate for field coupled nanocomputing. Moreover, the use of silicon substrate opens the possibilities to integrate DB circuits with existing infrastructure for the complementary metal-oxide-semiconductors (CMOS) devices. However, this emerging technology is still in its initial stage. This paper presents a T-shape structure to realize logic circuits. In addition, fundamental logic gates, such as, two-input AND, NAND, OR, XOR, and XNOR gates, are reported using the T-shape structure. Besides, a novel three-input majority (Si-DBM3) gate and a three-input XOR (Si-DBX3) gate, based on DB pairs, have been presented. Using the proposed Si-DBX3 and Si-DBM3 logic gates, a Full-adder (FA) is designed. All the logic gates are designed and verified using the SiQAD simulation tool.