Ag Nanoparticles Sheltered In2O3 Nanowire as a Capacitive MOS Memory Device

A capacitive memory effect has been reported for Ag nanoparticles (NPs) sheltered In
₂
O
₃
nanowires (NWs) devices. To compare the performance with that of bare In
₂
O
₃
NWs, two devices (viz. In
₂
O
₃
NW/Ag NPs and In
₂
O
₃
NW) were fabricated on n-Si substrate inside the electron beam (e-beam) evaporator using the double-step glancing angle deposition (GLAD) technique. The field emission scanning electron microscopy (FESEM) shows the formation of In
₂
O
₃
NWs and Ag NPs. The high-resolution transmission electron microscopy (HRTEM) shows the formation of uneven NWs and selected area electron diffraction (SAED) analysis confirmed the amorphous nature of the NWs. An averagely ~7.5 and ~9.3 fold enhanced absorption was observed in the UV region and visible region for In
₂
O
₃
NW/Ag NPs. The modulation in current density of ~4.5 fold at +10 V and ~5.7 fold at -10 V were observed for the fabricated In
₂
O
₃
NW/Ag NPs MOS device. At 2 MHz frequency response, the In
₂
O
₃
NW/Ag NPs device depicted a low interface trap density (Dit) of ~0.2 × 10
¹⁰
cm
^-2
eV
^-1
. The maximum memory window of 5.61 V at ±8 V was extracted for the In
₂
O
₃
NW/Ag NPs device from the large C-V hysteresis curve, thus establishing a strong presence of memory window in the device.