Analysis of GaN Selection and Discomfort for LLC Resonant Converter

This paper aims at the characteristics of LLC resonant converter; the purpose is to select a suitable GaN transistor as a switching device. This paper analyzes the structure, characteristics and packaging methods of various types of GaN new power semiconductor power devices. This paper prompts the potential safety risks of depletion transistors. This paper discusses the potential of different types of low-voltage and high-voltage GaN transistors used in LLC resonant circuits Problems and give some optimization methods. The final selection is most suitable for replacing low-voltage enhancement-mode GaN transistors produced by EPC Company with traditional Si MOSFETs to achieve the purpose of improving converter efficiency and power density.