High-Performance β-Ga2O3 Solar-Blind Schottky Barrier Photodiode With Record Detectivity and Ultrahigh Gain via Carrier Multiplication Process

In this letter, we demonstrate a high performance lateral β-Ga
₂
O
₃
solar-blind Schottky barrier photodiode (SBPD) with record detectivity (D*) and ultrahigh gain via carrier multiplication process. Due to the strong electric field, the carriers generated under the 254 nm light illumination undergo acceleration and impact ionization, contributing to the internal carrier multiplication process. Therefore, the photodetector (PD) is equipped with record D* of 2 × 10
¹⁶
Jones and ultrahigh gain of 1.7 × 10
⁴
, combining with a high photo-to-dark-current ratio of more than 105, a responsivity of 1.2 × 10
⁵
A/W and a large external quantum efficiency of 5.6 × 10
⁵
%. Without the requirement of complex device structure like other avalanche PDs, our SBPD can be used as a low-cost and easy-to-integrate technology to prepare high performance solar-blind PDs.