Nonlinear Characterization of GaN Transistors under Dynamic Bias Operation

This paper describes a measurement technique suitable for the characterization of GaN-based FET devices, based on exciting the device simultaneously with low-frequency large-signal and high-frequency small-signal tones. This technique allows one to accurately characterize low-frequency dispersion affecting this technology and at the same time the high-frequency behavior. We also discuss how to effectively use these measurements for modeling purpose.