Dual-Band Concurrent Low Noise LNA

This paper presents 1.66/3.26 GHz dual-band concurrent LNA with low NF. Proposed LNA incorporates notch filter matching circuit and mutual induction matching circuit on input and output side to improve NF. The measured S
₁₁
,S
₂₂
,S
₂₁
and NF were -7.11 dB, -8.41 dB, 12.5 dB, and 1.91 dB at 1.66 GHz and -7.52 dB, -16.0 dB, 9.02 dB and 3.25 dB at 3.26 GHz, respectively. IP1dB exhibits -10.3/-4.7 dBm at 1.66/3.26 GHz. The power consumption is 20.5 mW from a 1.8 V supply voltage. The proposed LNA is designed by using the TSMC-180 nm CMOS process.