Characteristics of noble-gas-ion-implanted amorphous-InGaZnO films on glass

We investigated noble gas ion He
⁺
, Ne
⁺
and Ar
⁺
implantation in amorphous indium-gallium-zinc oxide (a-IGZO) film on glass. Using X-ray photoelectron spectroscopy and cathodoluminescence, we find that oxygen vacancy relation peak increase after the Ar
⁺
implantation. From room temperature Hall measurement, we find that all the sheet resistances decrease remarkably after the noble gas ion implantations, which indicate that electrons obtained by oxygen vacancies can be attributed to a-IGZO film resistance reduction. We find also that the Ne
⁺
or Ar
⁺
implantation a-IGZO resistances decrease with increasing in acceleration energy. On the other hand, we obtained sheet resistance as a function of dose amount with uniform acceleration energy, from which we find one of the minimum resistance realized by optimization dose amount.