Effect of Chiral Vector on Voltage Transfer Characteristics of CNTFET Inverter

Chiral Vector of carbon nanotube (CNT) is a very important parameter. Change in chiral vector changes the diameter of CNT directly which in turn has effect on threshold voltage of CNTEFT. In this paper a simple CNTFET based Inverter has been simulated using Stanford University 32nm CNTFET model and the effect of changing chiral vector has been analyzed in HSPICE. The simulation results of Voltage Transfer Characteristics (VTC) of the Inverter are observed in two main scenarios; first, changing chiral vector for both NCNFET and PCNFET and second, changing chiral vector for either one type of CNTFET. Calculations show change in chiral vector changes the individual threshold voltages of NCNFET and PCNFET resulting in a significant change in inverter VTC curves with different values of chiral vectors. For the first scenario the inverter threshold voltage V
TH
remains same but for the second scenario V
TH
changes and the VTC curve experiences a shift along horizontal axis caused by change in the individual threshold voltage of either NCNFET or PCNFET.