Simplified FDTD Formulations for Magnetostatic Biased Graphene Simulations

Simplified finite difference time domain (FDTD) formulations are presented for magnetostatic biased graphene simulations. In this respect, graphene's anisotropic conductivity is incorporated into the FDTD algorithm by using the second-order Runge-Kutta (RK) scheme with the minimal additional computational resources. Moreover, the complex frequency shifted perfectly matched layer is combined with the presented RK-FDTD formulations to model open-space graphene structures. Numerical tests are included to validate the given formulations.