Effect of the Electric Field Strength on the Energy Resolution of Cr/CdTe/Pt Detectors

The electrical and spectrometric characteristics of the Cr/cadmium telluride (CdTe)/Pt structure with a metal-semiconductor type rectifying contact, used in X/γ-ray detectors, are investigated. For the detectors fabrication, chlorine-doped CdTe crystals with a resistivity of (3-6) × 10
⁹
Ω cm at 293 K were used. 137Cs spectra and their modification by applied voltage change were obtained. The reverse bias voltage corresponding to the best energy resolution of the Cr/CdTe/Pt structure is experimentally determined. The concentration of impurities N in the crystal, which determines the thickness of the space-charge region, is estimated. An energy resolution deterioration of the Cr/CdTe/Pt structure with increasing voltage is explained due to the Gunn effect.