Preparation of Sr/sub 2/AlTaO/sub 6/ thin films by metalorganic chemical vapor deposition

Sr/sub 2/AlTaO/sub 6/ (SAT) thin films were prepared by metalorganic chemical vapor deposition (MOCVD) using a double-metal alkoxide TaAl(O-iC/sub 3/H/sub 7/)/sub 8/ and Sr(DPM)/sub 2/-2tetraene as precursors. The former precursor was found to be stable for more than 300 h to prepare nearly stoichiometric thin films with the Ta/Al ratio of 1.0-1.3. High crystallinity of the films on SrTiO/sub 3/ substrates with the Sr/Al ratio slightly smaller than 2.0 was confirmed by X-ray diffraction. Moreover, 200 nm-thick SAT thin films were deposited on YBa/sub 2/Cu/sub 3/O/sub 7-/spl delta// thick films grown by liquid phase epitaxy. Measurements of dielectric properties using a parallel capacitor structure 200 /spl mu/m in diameter confirmed the conductance of the film lower than 10/sup -8/ S as well as an almost temperature-independent dielectric constant of approximately 24. These results indicate that SAT films grown by MOCVD are promising to be incorporated in high-T/sub c/ multilayer structures for electronic devices.