Alternating Current-Based Technique for Separate Extraction of Parasitic Resistances in MISFETs With or Without the Body Contact

We report a novel technique for separating the parasitic source (RS) and drain (RD) resistances in MISFETs using the open drain and the open source configurations based on an alternating-current(AC) signal. We conducted impedance analysis for the AC signal in the open drain for RS and the open source configuration for RD. The proposed technique is independent of the I-V equation of MISFETs with various influencing parameters for separate extraction of RS and RD through the physics-based equivalent circuit of MISFETs. So the proposed technique is applicable to every single device as long as the device is an insulated gate MISFET structure, regardless of the presence or absence of the body terminal. This technique is applied to amorphous oxide semiconductor thin-film transistors with the gate length =10μm without the body contact. As a result, parasitic resistances were separately extracted to be R
_S
= 2.1 kΩ, R
_D
= 1.7 kΩ for W = 600μm, R
_S
= R
_D
=1.1 kΩ for W = 1000μm, and R
_S
= R
_D
= 0.6 kΩ for W = 2000μm independent of gate bias.