Effect of Annealing Temperature on Switching Characteristics of Zinc Oxide based RRAM Device

In this work, the RRAM device with structure Si/Pt/Ti/ZnO/Ag was successfully investigated. The effect of annealing temperature on the switching characteristics was also investigated. The crystallographic structure of the ZnO thin film was studied using X-ray diffractometer (XRD). The switching characteristics of the fabricated device were analyzed with the help of I-V curves which were measured using semiconductor parameter analyzer. It has been observed that the fabricated devices have exhibited bipolar properties. Further, the measurement of retention properties at room temperature was also done for Si/Pt/Ti/ZnO/Ag structured device, which confirms the non-volatile properties of the fabricated devices. The ratio of low resistance state (LRS) and high resistance state (HRS) was found up to 10
²
. It has also been observed that LRS and HRS currents of the device do not degrade up to 10
⁴
s. The annealing of the device enhance the switching characteristics of the device.